? 2014 ixys corporation, all rights reserved ds100640(12/14) high voltage power mosfet n-channel enhancement mode features ? high blocking voltage ? high voltage package advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits ? laser and x-ray generation systems IXTH06N220P3HV symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 2200 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 2200 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c 0.60 a i d110 t c = 110 ? c 0.38 a i dm t c = 25 ? c, pulse width limited by t jm 1.20 a p d t c = 25 ? c 104 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6 g v dss = 2200v i d25 = 0.60a r ds(on) ?? ?? ?? ?? ?? 80 ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 2200 v v gs(th) v ds = v gs , i d = 250 ? a 2.0 4.0 v i gss v gs = ? 20v, v ds = 0v ????????????????????? 100 na i dss v ds = 0.8 ? v dss , v gs = 0v 10 ? a t j = 125 ? c 200 ??? a r ds(on) v gs = 10v, i d = 0.30a, note 1 80 ? g = gate d = drain s = source tab = drain to-247hv d (tab) g s d advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXTH06N220P3HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 60v, i d = 0.30a, note 1 0.24 0.40 s c iss 290 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 25 pf c rss 7 pf t d(on) 7 ns t r 18 ns t d(off) 19 ns t f 19 ns q g(on) 10.4 nc q gs v gs = 10v, v ds = 1.1kv, i d = 0.5 ? i d25 1.3 nc q gd 7.2 nc r thjc 1.2 ?? c/w r thcs 0.21 ?? c/w note: 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. resistive switching times v gs = 10v, v ds = 50v, i d = 0.60a r g = 10 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 0.6 a i sm repetitive, pulse width limited by t jm 1.2 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 1.1 s q rm 6.4 ????????????? c i rm 11.6 a i f = 0.6a, -di/dt = 100a/ s v r = 100v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247hv (ixth) outline e r a q s a3 e d c b a1 l1 d3 d1 d2 e2 e3 3x 2x 4x 3x a2 b1 0p e1 0p1 4 3 1 2 e1 l pins: 1 - gate 2 - source 3, 4 - drain
? 2014 ixys corporation, all rights reserved IXTH06N220P3HV fig. 2. output characteristics @ t j = 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 20 40 60 80 100 120 140 160 180 v ds - volts i d - amperes v gs = 10v 4v 5v 6v 7v fig. 3. r ds(on) normalized to i d = 0.3a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 0.3a i d = 0.6a fig. 4. r ds(on) normalized to i d = 0.3a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 0.2 0.4 0.6 0.8 1 1.2 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 1. output characteristics @ t j = 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 180 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v 4v fig. 6. input admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTH06N220P3HV fig. 11. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaa 3 fig. 7. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 01234567891011 q g - nanocoulombs v gs - volts v ds = 1100v i d = 0.3a i g = 10ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mh z c iss crss c oss
? 2014 ixys corporation, all rights reserved ixys ref: t_06n220p3hv(m3) 11-25-14 IXTH06N220P3HV fig. 13. forward-bias safe operating area @ t c = 75oc 0.01 0.1 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 1ms 100s r ds(on) limi t 10ms dc 100ms 25s fig. 12. forward-bias safe operating area @ t c = 25oc 0.01 0.1 1 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 10ms 100s r ds(on) limi t 1ms dc 25s 100ms
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